win±ØÓ®¹ú¼Ê¹Ù·½ÍøÕ¾

ÖÆÔìÓë·þÎñ

win¡¤±ØÓ®(Öйú´ó½)Ψһ¹Ù·½ÍøÕ¾-Bwin¹Ù·½ÊÚȨÈë¿Ú 0.11 Ultra-low Leakage

 

win¡¤±ØÓ®(Öйú´ó½)Ψһ¹Ù·½ÍøÕ¾-Bwin¹Ù·½ÊÚȨÈë¿Ú Overview
        ¹«Ë¾ 0.11 ULL½ÓÄÉÁËÂÁ»¥Á¬ÊÖÒÕ£¬£¬ £¬£¬£¬1P8M ¼Ü¹¹£¬£¬ £¬£¬£¬Ìṩ1.5V ÄÚºËÆ÷¼þ¼°3.3V ÊäÈëÊä³öÆ÷¼þ£¬£¬ £¬£¬£¬¾ß±¸³¬µÍйµçÌØµã£¬£¬ £¬£¬£¬Æ÷¼þÌØÕ÷Ioff (pA/um)<0.5¡£¡£ ¡£¡£¡£

 

win¡¤±ØÓ®(Öйú´ó½)Ψһ¹Ù·½ÍøÕ¾-Bwin¹Ù·½ÊÚȨÈë¿Ú Key Features 
- Single poly, eight-metal-layer process
- Al backend with low-K FSG material
- Device Ioff (typical) <0.5 pA/um

 

win¡¤±ØÓ®(Öйú´ó½)Ψһ¹Ù·½ÍøÕ¾-Bwin¹Ù·½ÊÚȨÈë¿Ú Applications
- MCU
- IOT


 

win¡¤±ØÓ®(Öйú´ó½)Ψһ¹Ù·½ÍøÕ¾-Bwin¹Ù·½ÊÚȨÈë¿Ú 0.11 ULL flash 

 

win¡¤±ØÓ®(Öйú´ó½)Ψһ¹Ù·½ÍøÕ¾-Bwin¹Ù·½ÊÚȨÈë¿Ú Overview
        ¹«Ë¾ 0.11 ULL flash ¹¤ÒÕÊÇ»ùÓÚ0.11 ULL¹¤ÒÕǶÈëflash, Âß¼­Æ÷¼þÓëULL¼æÈÝ¡£¡£ ¡£¡£¡£Ìṩ³¬µÍ¹¦ºÄÄ£ÄâIP¡£¡£ ¡£¡£¡£

 

win¡¤±ØÓ®(Öйú´ó½)Ψһ¹Ù·½ÍøÕ¾-Bwin¹Ù·½ÊÚȨÈë¿Ú Key Features
- Double poly, eight-metal-layer process
- Al backend with low-K FSG material
- Competitive flash macro cell size

 

win¡¤±ØÓ®(Öйú´ó½)Ψһ¹Ù·½ÍøÕ¾-Bwin¹Ù·½ÊÚȨÈë¿Ú Application 
- MCU
- IOT

ÍøÕ¾µØÍ¼